Manufacturer Part Number
SI4413ADY-T1-E3
Manufacturer
Vishay / Siliconix
Introduction
P-Channel TrenchFET MOSFET with ultra-low on-resistance, designed for high-efficiency power conversion and control applications.
Product Features and Performance
Extremely low on-resistance for high efficiency
Fast switching for high-frequency operation
Low gate charge for high-speed, high-frequency switching
Rugged and reliable
Superior RDS(on) × Area performance
Product Advantages
Minimizes conduction and switching losses
Enables high-frequency, high-efficiency power conversion
Provides robust and reliable power handling
Optimizes power density and thermal management
Key Technical Parameters
Drain to Source Voltage (Vdss): 30 V
Gate-Source Voltage (Vgs): ±20 V
Drain Current (Id): 10.5 A
On-Resistance (RDS(on)): 7.5 mΩ
Power Dissipation (Pd): 1.5 W
Quality and Safety Features
RoHS3 compliant
Qualified to AEC-Q101 standards for automotive applications
Compatibility
Surface mount (8-SOIC package)
Can be used in a wide range of power management and control applications
Application Areas
Switching power supplies
DC-DC converters
Motor drives
Battery chargers
Lighting ballasts
Industrial and consumer electronics
Product Lifecycle
This product is currently in production and actively available.
Replacement or upgrade options may become available in the future as technology advances.
Key Reasons to Choose This Product
Exceptional efficiency and power density due to ultra-low on-resistance
Fast switching capability for high-frequency, high-efficiency power conversion
Robust and reliable performance for demanding applications
Optimized for thermal management and power density
RoHS3 compliance and automotive-grade quality