SI4411DY-T1-E3 - Vishay Siliconix

Manufacturer Part Number

SI4411DY-T1-E3

Manufacturer

Vishay / Siliconix

Introduction

Discrete Semiconductor Product

Single Transistor FET, MOSFET

Product Features and Performance

ROHS3 Compliant

8-SOIC Package (0.154", 3.90mm Width)

Tape & Reel Packaging

Operating Temperature: -55°C to 150°C

Drain to Source Voltage (Vdss): 30V

Gate-Source Voltage (Vgs Max): ±20V

On-Resistance (Rds On Max): 10mOhm @ 13A, 10V

MOSFET Technology

Continuous Drain Current (Id): 9A @ 25°C

Power Dissipation (Max): 1.5W

P-Channel FET Type

Gate Threshold Voltage (Vgs(th) Max): 3V @ 250A

Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V

Gate Charge (Qg Max): 65nC @ 5V

Product Advantages

Low On-Resistance for efficient power switching

Wide temperature range for diverse applications

Compact 8-SOIC surface mount package

Key Technical Parameters

Drain-Source Voltage, Gate-Source Voltage

On-Resistance, Continuous Drain Current

Power Dissipation, FET Type, Gate Threshold Voltage

Quality and Safety Features

ROHS3 Compliant for environmental responsibility

Reliable performance across wide temperature range

Compatibility

Suitable for a variety of power switching and control applications

Application Areas

Power supplies, motor drives, lighting controls, and other power electronics

Product Lifecycle

Current production part, no discontinuation or end-of-life planned

Key Reasons to Choose

Excellent power efficiency due to low on-resistance

Wide operating temperature range for diverse applications

Compact surface mount package for space-constrained designs

Reliable performance and environmental compliance