Manufacturer Part Number
SI4126DY-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
Discrete Semiconductor Product - Transistors - FETs, MOSFETs - Single
Product Features and Performance
RoHS3 Compliant
8-SOIC (0.154", 3.90mm Width) package
TrenchFET Series
Tape & Reel (TR) packaging
Operating Temperature: -55°C to 150°C (TJ)
Drain to Source Voltage (Vdss): 30V
Vgs (Max): ±20V
Rds On (Max) @ Id, Vgs: 2.75mOhm @ 15A, 10V
MOSFET (Metal Oxide) technology
Continuous Drain Current (Id) @ 25°C: 39A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4405 pF @ 15V
Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc)
N-Channel FET Type
Vgs(th) (Max) @ Id: 2.5V @ 250A
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10V
Surface Mount Mounting Type
Product Advantages
High performance TrenchFET technology
Low on-resistance for efficient power conversion
Wide temperature range for diverse applications
Compact 8-SOIC surface mount package
Key Technical Parameters
Drain to Source Voltage (Vdss): 30V
Vgs (Max): ±20V
Rds On (Max) @ Id, Vgs: 2.75mOhm @ 15A, 10V
Continuous Drain Current (Id) @ 25°C: 39A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4405 pF @ 15V
Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc)
Quality and Safety Features
RoHS3 Compliant
Suitable for high-reliability applications
Compatibility
Surface mount 8-SOIC package
Compatible with standard MOSFET drivers and control circuits
Application Areas
Power conversion and management
Motor control
Industrial and consumer electronics
Product Lifecycle
Current product, no discontinuation planned
Replacements and upgrades available as technology advances
Several Key Reasons to Choose This Product
High performance TrenchFET technology for efficient power conversion
Low on-resistance for reduced power loss
Wide temperature range for diverse applications
Compact surface mount package for space-constrained designs
Proven reliability and quality with RoHS3 compliance
Compatibility with standard MOSFET control circuits