SI4128DY-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SI4128DY-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

N-Channel MOSFET transistor

Part of the TrenchFET series

Product Features and Performance

Wide operating temperature range of -55°C to 150°C

High drain-to-source voltage of 30V

Low on-resistance (RDS(on)) of 24mΩ @ 7.8A, 10V

High continuous drain current of 10.9A

Low input capacitance of 435pF @ 15V

Maximum power dissipation of 2.4W (Ta), 5W (Tc)

Low gate charge of 12nC @ 10V

Product Advantages

Excellent thermal and electrical performance

Compact surface mount package

Suitable for high power switching applications

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 30V

Gate-to-Source Voltage (Vgs): ±20V

Threshold Voltage (Vgs(th)): 2.5V @ 250A

Drive Voltage (Max RDS(on), Min RDS(on)): 4.5V, 10V

Quality and Safety Features

RoHS3 compliant

8-SOIC (0.154", 3.90mm Width) package

Compatibility

Suitable for surface mount applications

Application Areas

High power switching circuits

Power supplies

Motor drives

Industrial and automotive electronics

Product Lifecycle

Current production, no discontinuation plans

Several Key Reasons to Choose This Product

Excellent thermal and electrical performance for high power applications

Compact surface mount package for space-constrained designs

Wide operating temperature range for demanding environments

Low on-resistance and high current handling capability

RoHS3 compliance for use in various applications