SI4124DY-T1-E3 - Vishay Siliconix

Manufacturer Part Number

SI4124DY-T1-E3

Manufacturer

Vishay / Siliconix

Introduction

This product is a discrete semiconductor device, specifically a single N-Channel TrenchFET MOSFET.

Product Features and Performance

40V Drain to Source Voltage (Vdss)

Maximum Gate-Source Voltage (Vgs) of ±20V

On-Resistance (Rds(on)) as low as 7.5 milliohms @ 14A, 10V

Continuous Drain Current (Id) up to 20.5A at 25°C

Input Capacitance (Ciss) of 3540 pF @ 20V

Power Dissipation up to 2.5W at Ta or 5.7W at Tc

Operating Temperature Range of -55°C to +150°C

Product Advantages

Low on-resistance for high efficiency

High current handling capability

Compact 8-SOIC surface mount package

Key Technical Parameters

MOSFET Technology: TrenchFET N-Channel

Threshold Voltage (Vgs(th)) up to 3V @ 250uA

Drive Voltage Range: 4.5V to 10V

Gate Charge (Qg) up to 77 nC @ 10V

Quality and Safety Features

RoHS3 Compliant

Tape and Reel packaging

Compatibility

This MOSFET can be used in a variety of power management and control applications.

Application Areas

Power supplies

Motor drives

Switching regulators

Amplifiers

Battery management

Product Lifecycle

This product is an active and ongoing part of Vishay's portfolio. Replacement or upgrade options may be available as technology evolves.

Key Reasons to Choose This Product

Excellent performance-to-size ratio with low on-resistance and high current rating

Compact surface mount package for space-constrained designs

Reliable operation across wide temperature range

RoHS3 compliance for use in modern electronics