Manufacturer Part Number
SI3585DV-T1-E3
Manufacturer
Vishay / Siliconix
Introduction
N and P-Channel TrenchFET MOSFET Array in a SOT-23-6 Thin, TSOT-23-6 package
Product Features and Performance
Power rating up to 830mW
Operating temperature range of -55°C to 150°C
Low on-resistance of 125mOhm @ 2.4A, 4.5V
Continuous drain current up to 2A @ 25°C
Logic level gate with Vgs(th) (Max) of 600mV @ 250A (Min)
Low gate charge of 3.2nC @ 4.5V
Product Advantages
High power density and efficiency
Excellent thermal management
Reliable operation in extreme environments
Key Technical Parameters
Drain to Source Voltage (Vdss): 20V
Configuration: N and P-Channel
Technology: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Mounting Type: Surface Mount
Quality and Safety Features
RoHS3 compliant
Compatibility
Suitable for a wide range of applications requiring high-performance power management and control
Application Areas
Power management circuits
Motor drives
Switching power supplies
Industrial and consumer electronics
Product Lifecycle
Currently available, no discontinuation or replacements/upgrades announced
Key Reasons to Choose This Product
High power density and efficiency for compact designs
Reliable operation in extreme temperatures and environments
Low on-resistance and gate charge for improved system performance
Logic level gate for easy integration with control circuitry
RoHS3 compliance for environmentally-friendly applications