SI3552DV-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SI3552DV-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

Discrete Semiconductor Product

Transistors FETs, MOSFETs Arrays

Product Features and Performance

Trench MOSFET technology

Logic level gate

Low on-resistance

High-speed switching

Product Advantages

Compact surface mount package

Wide temperature range (-55°C to 150°C)

Efficient power handling (1.15W max power)

Configurable as N-channel and P-channel

Key Technical Parameters

Drain-Source Voltage (Vdss): 30V

On-resistance (Rds(on)): 105mΩ @ 2.5A, 10V

Continuous Drain Current (Id): 2.5A @ 25°C

Gate Threshold Voltage (Vgs(th)): 1V @ 250μA (min)

Gate Charge (Qg): 3.2nC @ 5V (max)

Quality and Safety Features

RoHS3 compliant

Tape and reel packaging

Compatibility

Surface mount SOT-23-6 / TSOT-23-6 package

Application Areas

Power management circuits

Switching power supplies

Motor control

Load switching

Product Lifecycle

Current production model

Replacement/upgrade options available

Key Reasons to Choose This Product

High-performance trench MOSFET technology

Efficient power handling and low on-resistance

Wide temperature range and compact package

Configurable as both N-channel and P-channel

RoHS compliance and reliable tape and reel packaging