SI3552DV-T1-E3 - Vishay Siliconix

Manufacturer Part Number

SI3552DV-T1-E3

Manufacturer

Vishay / Siliconix

Introduction

This is a Discrete Semiconductor Product in the Transistors - FETs, MOSFETs - Arrays category.

Product Features and Performance

ROHS3 Compliant

6-TSOP package

SOT-23-6 Thin, TSOT-23-6 package

Tape & Reel (TR) packaging

Operating temperature range of -55°C to 150°C (TJ)

Maximum power rating of 1.15W

N and P-Channel configuration

30V Drain to Source Voltage (Vdss)

105mOhm maximum On-Resistance (Rds On) at 2.5A, 10V

MOSFET (Metal Oxide) technology

5A maximum Continuous Drain Current (Id) at 25°C

Logic Level Gate FET feature

1V maximum Gate-Source Threshold Voltage (Vgs(th)) at 250A (Min)

2nC maximum Gate Charge (Qg) at 5V

Product Advantages

Compact surface mount package

Wide operating temperature range

High power handling capability

Low on-resistance for efficient power conversion

Logic level gate for easy control

Key Technical Parameters

Drain to Source Voltage (Vdss): 30V

On-Resistance (Rds On): 105mOhm @ 2.5A, 10V

Continuous Drain Current (Id): 2.5A @ 25°C

Gate-Source Threshold Voltage (Vgs(th)): 1V @ 250A (Min)

Gate Charge (Qg): 3.2nC @ 5V

Quality and Safety Features

ROHS3 compliant

Compatibility

Surface mount package

Application Areas

Power management

Motor control

Switching power supplies

Automotive electronics

Product Lifecycle

Current product

Replacement or upgrade options available

Key Reasons to Choose This Product

Wide temperature range

High power handling

Low on-resistance for efficiency

Logic level gate for easy control

Compact surface mount package