Manufacturer Part Number
SI3443CDV-T1-E3
Manufacturer
Vishay / Siliconix
Introduction
This is a P-channel enhancement-mode MOSFET transistor part of the TrenchFET series from Vishay Siliconix.
Product Features and Performance
20V Drain-to-Source Voltage
60 mOhm On-Resistance
97A Continuous Drain Current
610 pF Input Capacitance
2W Power Dissipation
-55°C to 150°C Operating Temperature Range
Product Advantages
Low on-resistance for high efficiency
High current handling capability
Compact surface mount package
Wide operating temperature range
Key Technical Parameters
Drain-to-Source Voltage: 20V
Maximum Gate-to-Source Voltage: ±12V
On-Resistance: 60 mOhm
Continuous Drain Current: 5.97A
Input Capacitance: 610 pF
Power Dissipation: 2W
Quality and Safety Features
RoHS3 compliant
Tape and reel packaging for automated assembly
Compatibility
Suitable for surface mount applications
Application Areas
Power management circuits
Motor control
Switching power supplies
Product Lifecycle
Current product, no plans for discontinuation
Replacement options available if needed
Key Reasons to Choose This Product
Excellent performance-to-size ratio
Low on-resistance for high efficiency
High current handling capability
Wide operating temperature range
Surface mount package for automated assembly
RoHS compliance for environmental considerations