Manufacturer Part Number
SI3443BDV-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
High-performance P-Channel TrenchFET power MOSFET with low on-resistance and fast switching for power management applications.
Product Features and Performance
Low on-resistance (60 mΩ max at 4.5 V gate-source voltage)
Fast switching
High current capability (3.6 A continuous at 25°C)
Wide operating temperature range (-55°C to 150°C)
Low gate charge (9 nC max at 4.5 V)
Product Advantages
Excellent power efficiency
Reliable and robust design
Suitable for high-density power conversion and management applications
Key Technical Parameters
Drain to Source Voltage (Vdss): 20 V
Gate-Source Voltage (Vgs): ±12 V
Continuous Drain Current (Id): 3.6 A at 25°C
Power Dissipation (Ptot): 1.1 W at 25°C
On-Resistance (Rds(on)): 60 mΩ max at 4.5 V gate-source voltage
Gate Charge (Qg): 9 nC max at 4.5 V
Quality and Safety Features
RoHS3 compliant
Excellent reliability and performance
Compatibility
Suitable for a wide range of power management and conversion applications, including:
Switch-mode power supplies
DC-DC converters
Motor drives
Lighting and industrial controls
Application Areas
Power management and conversion
Motor control
Industrial and consumer electronics
Product Lifecycle
The SI3443BDV-T1-GE3 is an active and readily available product. Vishay/Siliconix continues to offer this part and provides replacement or upgrade options as needed.
Key Reasons to Choose This Product
Excellent power efficiency and performance
Reliable and robust design
Wide operating temperature range
Suitable for high-density power conversion and management applications
RoHS3 compliance for environmental safety