Manufacturer Part Number
SI3443BDV-T1-E3
Manufacturer
Vishay / Siliconix
Introduction
Discrete Semiconductor Product
Single Transistor FET, MOSFET
Product Features and Performance
RoHS3 Compliant
Surface Mount Packaging
Operating Temperature: -55°C to 150°C (TJ)
Drain to Source Voltage (Vdss): 20V
Maximum Gate-Source Voltage (Vgs): ±12V
On-Resistance (Rds(on)): 60mΩ @ 4.7A, 4.5V
Continuous Drain Current (Id): 3.6A @ 25°C
Maximum Power Dissipation: 1.1W @ 25°C
P-Channel MOSFET
Product Advantages
Low on-resistance for efficient power conversion
High current handling capability
Wide temperature range operation
Efficient surface mount packaging
Key Technical Parameters
MOSFET Technology
Threshold Voltage (Vgs(th)): 1.4V @ 250μA
Drive Voltage (Rds(on) Max/Min): 2.5V/4.5V
Gate Charge (Qg): 9nC @ 4.5V
Quality and Safety Features
RoHS3 Compliant
Reliability tested for industrial applications
Compatibility
Suitable for a variety of power conversion and control applications
Application Areas
Power supplies
Motor drives
Battery chargers
Industrial controls
Product Lifecycle
Currently available
No discontinuation or replacement plans announced
Key Reasons to Choose This Product
Efficient power handling with low on-resistance
Wide operating temperature range
Small surface mount package for compact designs
Proven reliability for industrial applications