SI2312CDS-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SI2312CDS-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

The SI2312CDS-T1-GE3 is a high-performance, low-voltage N-channel MOSFET transistor in a compact SOT-23-3 package.

Product Features and Performance

Optimized for low on-resistance

Fast switching speed

Low gate charge for efficient switching

Wide operating temperature range of -55°C to 150°C

Robust design with high reliability

Product Advantages

Excellent performance in power management and control applications

Efficient power conversion with low conduction losses

Compact size suitable for space-constrained designs

Reliable operation across a wide temperature range

Key Technical Parameters

Drain to Source Voltage (Vdss): 20V

Maximum Gate-Source Voltage (Vgs): ±8V

On-Resistance (Rds(on)): 31.8mΩ @ 5A, 4.5V

Continuous Drain Current (Id): 6A @ 25°C

Input Capacitance (Ciss): 865pF @ 10V

Power Dissipation: 1.25W (Ta), 2.1W (Tc)

Quality and Safety Features

RoHS3 compliant

Reliable trench MOSFET technology

Stringent quality control and testing processes

Compatibility

Compatible with a wide range of power management and control applications

Suitable for use in various electronic devices and systems

Application Areas

Power supplies

Motor drives

Battery management systems

LED lighting

Telecommunications equipment

Product Lifecycle

This product is currently in production and is not nearing discontinuation.

Replacement or upgrade options are available from the manufacturer.

Key Reasons to Choose This Product

Exceptional performance in power management and control applications

Efficient power conversion with low conduction losses

Compact and space-saving design

Reliable operation across a wide temperature range

Robust construction and high-quality manufacturing

Compatibility with a wide range of power electronics applications