Manufacturer Part Number
SI2312BDS-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
N-Channel Enhancement Mode Field Effect Transistor
Product Features and Performance
Low on-resistance of 31 mOhm at 5A, 4.5V
Continuous drain current of 3.9A at 25°C
Power dissipation of 750 mW at 25°C
Gate-to-source voltage range of ±8V
Fast switching speed
Suitable for high-frequency applications
Product Advantages
Excellent on-state resistance for efficient power transfer
High current handling capability
Wide operating temperature range of -55°C to 150°C
Compact surface-mount package
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 20V
Gate Threshold Voltage (Vgs(th)): 850 mV at 250 μA
Gate Charge (Qg): 12 nC at 4.5V
Quality and Safety Features
RoHS3 compliant
Meets reliability standards for industrial and automotive applications
Compatibility
Compatible with various electronic circuits and systems that require high-performance, low-resistance N-Channel MOSFETs
Application Areas
Switching power supplies
DC-DC converters
Motor drives
Automotive electronics
Industrial control systems
Product Lifecycle
Current production model
Replacement and upgrade options available
Key Reasons to Choose This Product
Excellent performance-to-cost ratio
Compact and efficient surface-mount package
Reliable operation across a wide temperature range
Suitable for high-frequency, high-power applications
Compliance with industry standards for quality and safety
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