SI2312BDS-T1-E3 - Vishay Siliconix

Manufacturer Part Number

SI2312BDS-T1-E3

Manufacturer

Vishay / Siliconix

Introduction

N-channel enhancement-mode field-effect transistor (FET) in a surface-mount SOT-23-3 package

Designed for power management, switching, and control applications

Product Features and Performance

Trench technology for low on-resistance

Low gate charge for fast switching

High reliability and ruggedness

Wide operating temperature range of -55°C to 150°C

Product Advantages

Excellent power efficiency and thermal performance

Compact and space-saving surface-mount package

Suitable for a variety of power management applications

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 20V

Gate-to-Source Voltage (Vgs): ±8V

On-Resistance (Rds(on)): 31mΩ @ 5A, 4.5V

Continuous Drain Current (Id): 3.9A @ 25°C

Power Dissipation (Pd): 750mW @ 25°C

Quality and Safety Features

RoHS3 compliant

Designed for high reliability and long-term performance

Compatibility

Suitable for a wide range of power management and control applications

Application Areas

Power supplies

Motor drives

LED drivers

Battery management systems

General power management and control applications

Product Lifecycle

This product is currently in production and available for purchase

Replacement or upgrade options may be available from Vishay/Siliconix or other MOSFET manufacturers

Key Reasons to Choose This Product

Excellent power efficiency and thermal performance

Compact and space-saving surface-mount package

Suitable for a wide range of power management applications

Designed for high reliability and long-term performance

RoHS3 compliant for environmental compliance