SI2305CDS-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SI2305CDS-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

This product is a P-Channel MOSFET transistor from the TrenchFET series, designed for a variety of power management and control applications.

Product Features and Performance

Drain to Source Voltage (Vdss) of 8V

Maximum Gate-Source Voltage (Vgs) of ±8V

On-Resistance (Rds(on)) of 35mOhm @ 4.4A, 4.5V

Continuous Drain Current (Id) of 5.8A at 25°C

Input Capacitance (Ciss) of 960pF @ 4V

Power Dissipation of 960mW (Ta) and 1.7W (Tc)

Operating Temperature Range of -55°C to 150°C

Product Advantages

Low on-resistance for efficient power delivery

Fast switching capabilities for power management applications

Rugged design with high temperature operation

Key Technical Parameters

MOSFET (Metal Oxide Semiconductor Field Effect Transistor) technology

P-Channel FET type

Threshold Voltage (Vgs(th)) of 1V @ 250A

Gate Charge (Qg) of 30nC @ 8V

Mounting type: Surface Mount

Quality and Safety Features

RoHS3 compliant

Packaged in SOT-23-3 (TO-236) package

Compatibility

Compatible with a wide range of power management and control applications.

Application Areas

Power management circuits

Motor control

Switching regulators

Battery chargers

General-purpose power control

Product Lifecycle

This product is currently available and not nearing discontinuation. Replacement or upgrade options may be available from the manufacturer.

Key Reasons to Choose This Product

Low on-resistance for efficient power delivery

Fast switching capabilities for enhanced power management performance

Rugged design with high temperature operation for reliable performance

Small, surface-mount package for compact design

RoHS3 compliance for environmental considerations