Manufacturer Part Number
SI2305DS-T1-E3
Manufacturer
Vishay / Siliconix
Introduction
The SI2305DS-T1-E3 is a P-channel MOSFET transistor with a drain-source voltage of 8V.
Product Features and Performance
5A continuous drain current at 25°C
Low on-resistance of 52mΩ at 3.5A, 4.5V
Input capacitance of 1245pF at 4V
Threshold voltage of 800mV at 250μA
Gate charge of 15nC at 4.5V
Product Advantages
High current handling capability
Low on-resistance for efficient power transfer
Small SOT-23-3 package for compact designs
Key Technical Parameters
Drain-Source Voltage (Vdss): 8V
Continuous Drain Current (Id): 3.5A
On-Resistance (Rds(on)): 52mΩ
Input Capacitance (Ciss): 1245pF
Threshold Voltage (Vgs(th)): 800mV
Gate Charge (Qg): 15nC
Quality and Safety Features
RoHS3 compliant
Housed in a compact SOT-23-3 package
Compatibility
Surface mount package
Application Areas
Suitable for power management, switching, and control circuits in various electronic devices
Product Lifecycle
Currently available
No information on discontinuation or replacement
Key Reasons to Choose
High current handling capability
Low on-resistance for efficient power transfer
Small form factor for compact designs
RoHS3 compliance for environmental responsibility
