SI2305ADS-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SI2305ADS-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

The SI2305ADS-T1-GE3 is a P-channel MOSFET transistor from Vishay/Siliconix, designed for a wide range of power management and switching applications.

Product Features and Performance

P-channel MOSFET with low on-resistance (Rds(on))

Capable of handling up to 5.4A continuous drain current at 25°C

Supports operating voltages up to 8V drain-to-source

Wide operating temperature range of -50°C to 150°C

Product Advantages

Excellent power efficiency due to low on-resistance

Reliable performance across a wide temperature range

Small surface-mount package (SOT-23-3) for compact design

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 8V

Gate-to-Source Voltage (Vgs): ±8V

On-Resistance (Rds(on)): 40mΩ @ 4.1A, 4.5V

Continuous Drain Current (Id): 5.4A @ 25°C

Input Capacitance (Ciss): 740pF @ 4V

Power Dissipation: 960mW (Ta), 1.7W (Tc)

Quality and Safety Features

Compliant with RoHS3 environmental directives

Suitable for reflow soldering in surface-mount applications

Compatibility

Compatible with various power management and switching circuits

Application Areas

Power management circuits

Switch-mode power supplies

Motor drives

Battery charging and protection circuits

Product Lifecycle

This product is an active, in-production part from Vishay/Siliconix.

Replacements and upgrades may be available for this part.

Key Reasons to Choose This Product

Efficient power handling due to low on-resistance

Wide operating temperature range for reliable performance

Small package size for compact designs

Compliance with environmental regulations

Suitable for a variety of power management and switching applications