Manufacturer Part Number
SI2303CDS-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
Single P-channel enhancement-mode power MOSFET
Designed for power switching and amplifier applications
Product Features and Performance
Low on-resistance (RDS(ON)) of 190 mΩ max
High current capability of 2.7 A continuous drain current
Fast switching speed
Low gate charge (Qg) of 8 nC max
Wide operating temperature range of -55°C to 150°C
Product Advantages
Efficient power conversion and control
Compact surface-mount packaging
Reliable and robust design
Key Technical Parameters
Drain-source voltage (VDS): 30 V
Gate-source voltage (VGS): ±20 V
On-resistance (RDS(ON)): 190 mΩ max
Drain current (ID): 2.7 A continuous
Quality and Safety Features
RoHS3 compliant
Suitable for harsh environments
Compatibility
Compatible with various power supply and control applications
Application Areas
Power switching
Motor control
Amplifier circuits
Battery-powered devices
Product Lifecycle
Currently in production
Replacements and upgrades available
Several Key Reasons to Choose This Product
Excellent power handling and efficiency
Compact and easy to integrate
Wide operating temperature range
Reliable and durable performance
RoHS compliance for environmental safety