SI2303BDS-T1-E3 - Vishay Siliconix

Manufacturer Part Number

SI2303BDS-T1-E3

Manufacturer

Vishay / Siliconix

Introduction

P-channel enhancement-mode field-effect transistor (MOSFET) in a SOT-23-3 (TO-236) package.

Product Features and Performance

Suitable for low-voltage, low-power switching and amplifier applications

Robust design with high reliability and long operating life

Low on-resistance for low power consumption

Fast switching speed

High breakdown voltage

High input impedance

Low gate charge for efficient switching

Product Advantages

Compact SOT-23-3 (TO-236) package

Excellent thermal management

High energy efficiency

Reliable and long-lasting performance

Key Technical Parameters

Drain to Source Voltage (Vdss): 30 V

Gate to Source Voltage (Vgs): ±20 V

On-resistance (Rds(on)): 200 mΩ @ 1.7 A, 10 V

Continuous Drain Current (Id): 1.49 A (at 25°C)

Input Capacitance (Ciss): 180 pF @ 15 V

Power Dissipation (Pd): 700 mW (at 25°C)

Gate Threshold Voltage (Vgs(th)): 3 V @ 250 μA

Gate Charge (Qg): 10 nC @ 10 V

Quality and Safety Features

RoHS3 compliant

Robust and reliable design

Tested and certified for quality and safety

Compatibility

Suitable for a wide range of low-voltage, low-power applications

Can be used in various electronic circuits and systems

Application Areas

Switching power supplies

Audio amplifiers

Motor controls

Battery chargers

Automotive electronics

Industrial control systems

Product Lifecycle

Currently available and not nearing discontinuation

Replacement or upgrade options may be available from the manufacturer

Key Reasons to Choose This Product

Excellent performance and energy efficiency

Compact and reliable SOT-23-3 (TO-236) package

Wide operating temperature range (-55°C to 150°C)

Robust and long-lasting design

Suitable for a variety of low-voltage, low-power applications

Cost-effective solution for many electronic systems