SI2303CDS-T1-E3 - Vishay Siliconix

Manufacturer Part Number

SI2303CDS-T1-E3

Manufacturer

Vishay / Siliconix

Introduction

Discrete Semiconductor Product

P-Channel MOSFET Transistor

Product Features and Performance

Trench MOSFET technology

Low on-resistance

Fast switching speed

High current handling capability

Suitable for power management and switching applications

Product Advantages

Efficient power conversion

Improved energy savings

Compact and space-saving design

Reliable and durable performance

Key Technical Parameters

Drain to Source Voltage (Vdss): 30 V

Vgs (Max): ±20 V

Rds On (Max) @ Id, Vgs: 190 mΩ @ 1.9 A, 10 V

Continuous Drain Current (Id) @ 25°C: 2.7 A

Input Capacitance (Ciss) (Max) @ Vds: 155 pF @ 15 V

Power Dissipation (Max): 2.3 W

Vgs(th) (Max) @ Id: 3 V @ 250 A

Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V

Quality and Safety Features

RoHS3 compliant

Suitable for high-temperature applications (-55°C to 150°C)

Compatibility

Compatible with various power management and switching applications

Application Areas

Power supplies

DC-DC converters

Motor drives

Lighting control

Battery chargers

Product Lifecycle

Current production model

Replacements and upgrades available

Key Reasons to Choose This Product

Efficient power conversion and energy savings

Reliable and durable performance

Compact and space-saving design

Suitable for a wide range of power management and switching applications

Compliance with RoHS3 and high-temperature operation