Manufacturer Part Number
SI1965DH-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
Discrete Semiconductor Product
Transistors FETs, MOSFETs Arrays
Product Features and Performance
P-Channel (Dual) MOSFET
Drain to Source Voltage (Vdss): 12V
On-Resistance (Rds On): 390mOhm @ 1A, 4.5V
Continuous Drain Current (Id): 1.3A @ 25°C
Input Capacitance (Ciss): 120pF @ 6V
Gate Threshold Voltage (Vgs(th)): 1V @ 250A
Gate Charge (Qg): 4.2nC @ 8V
Product Advantages
Logic Level Gate
Low On-Resistance
High Current Capability
Suitable for Power Management Applications
Key Technical Parameters
MOSFET Technology
6-TSSOP, SC-88, SOT-363 Package
Operating Temperature: -55°C to 150°C
Quality and Safety Features
RoHS3 Compliant
Compatibility
Suitable for Surface Mount Applications
Application Areas
Power Management
Motor Control
Switching Circuits
Product Lifecycle
Currently Available
Replacements and Upgrades May Be Available
Key Reasons to Choose
High Performance MOSFET
Compact Surface Mount Package
Excellent Thermal Characteristics
Reliable and RoHS Compliant