SI1926DL-T1-E3 - Vishay Siliconix

Manufacturer Part Number

SI1926DL-T1-E3

Manufacturer

Vishay / Siliconix

Introduction

Discrete Semiconductor Product - Transistors - FETs, MOSFETs - Arrays

Product Features and Performance

Dual N-Channel MOSFET

60V Drain to Source Voltage

4Ω Max On-Resistance at 340mA, 10V

370mA Continuous Drain Current at 25°C

5pF Max Input Capacitance at 30V

5V Max Gate-Source Threshold Voltage at 250μA

4nC Max Gate Charge at 10V

Product Advantages

Low On-Resistance

Low Input Capacitance

Logic Level Gate

Wide Temperature Range

Key Technical Parameters

Drain to Source Voltage: 60V

On-Resistance: 1.4Ω Max

Continuous Drain Current: 370mA at 25°C

Input Capacitance: 18.5pF Max

Gate-Source Threshold Voltage: 2.5V Max

Gate Charge: 1.4nC Max

Quality and Safety Features

RoHS3 Compliant

Surface Mount Packaging

Compatibility

Compatible with a wide range of electronic circuit designs and applications.

Application Areas

Power management circuits

Switching circuits

Amplifier circuits

General-purpose electronic applications

Product Lifecycle

This product is currently available and not nearing discontinuation. Replacement or upgrade options may be available.

Key Reasons to Choose This Product

Low On-Resistance for efficient power handling

Low Input Capacitance for fast switching

Logic Level Gate for easy control

Wide Temperature Range for versatile applications

RoHS3 Compliance for environmentally-friendly design

Surface Mount Packaging for automated assembly