SI1926DL-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SI1926DL-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

The SI1926DL-T1-GE3 is a dual N-channel MOSFET transistor designed for a wide range of applications.

Product Features and Performance

N-channel MOSFET transistor

Dual configuration

Optimized for logic-level gate operation

Low on-resistance

High switching speed

Wide operating temperature range

Product Advantages

Compact surface mount package

High power density

Reliable performance

Suitable for a variety of applications

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 60V

On-Resistance (Rds(on)): 1.4Ω @ 340mA, 10V

Continuous Drain Current (Id): 370mA @ 25°C

Input Capacitance (Ciss): 18.5pF @ 30V

Gate Threshold Voltage (Vgs(th)): 2.5V @ 250μA

Gate Charge (Qg): 1.4nC @ 10V

Quality and Safety Features

RoHS3 compliant

Suitable for reflow soldering

Compatibility

Suitable for a wide range of electronic applications

Application Areas

Power management

Switching circuits

Driver circuits

General-purpose electronics

Product Lifecycle

Currently available

No information on discontinuation or replacement

Key Reasons to Choose This Product

Reliable performance in a compact surface mount package

Optimized for logic-level gate operation

Low on-resistance and high switching speed

Wide operating temperature range

Suitable for a variety of applications in power management and control circuits