Manufacturer Part Number
SI1302DL-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
Discrete Semiconductor Product
Transistors FETs, MOSFETs Single
Product Features and Performance
RoHS3 Compliant
SC-70-3 Package
TrenchFET Series
Tape & Reel (TR) Packaging
Operating Temperature: -55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Rds On (Max) @ Id, Vgs: 480mOhm @ 600mA, 10V
MOSFET (Metal Oxide) Technology
Current Continuous Drain (Id) @ 25°C: 600mA (Ta)
Power Dissipation (Max): 280mW (Ta)
N-Channel FET Type
Vgs(th) (Max) @ Id: 3V @ 250A
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V
Surface Mount Mounting Type
Product Advantages
RoHS3 Compliance
Wide Operating Temperature Range
Low On-Resistance
High Voltage Capability
High Current Handling
Efficient Power Dissipation
Key Technical Parameters
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Rds On (Max) @ Id, Vgs: 480mOhm @ 600mA, 10V
Current Continuous Drain (Id) @ 25°C: 600mA (Ta)
Power Dissipation (Max): 280mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250A
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V
Quality and Safety Features
RoHS3 Compliant
Compatibility
Compatible with a wide range of electronic devices and circuits
Application Areas
Suitable for use in various electronic circuits and applications requiring a high-performance, low on-resistance N-channel MOSFET
Product Lifecycle
This product is currently available and not nearing discontinuation
Replacements and upgrades may be available from Vishay/Siliconix or other MOSFET manufacturers
Key Reasons to Choose This Product
RoHS3 Compliance for environmentally-friendly applications
Wide operating temperature range (-55°C to 150°C)
Low on-resistance for efficient power handling
High voltage and current capability for versatile use
Efficient power dissipation for thermal management
Surface mount packaging for compact designs
Availability and compatibility with a wide range of electronic systems
SI1300DL-T1-GE3Electro-Films (EFI) / Vishay