Manufacturer Part Number
SI1302DL-T1-E3
Manufacturer
Vishay / Siliconix
Introduction
N-channel MOSFET transistor
Designed for power switching and amplifier applications
Product Features and Performance
Trench MOSFET technology
Low on-resistance (RDS(on) = 480 mΩ @ 600 mA, 10 V)
Fast switching speed
Low gate charge (Qg = 1.4 nC @ 10 V)
Wide operating temperature range (-55°C to 150°C)
Product Advantages
Efficient power conversion and control
Reliable high-performance switching
Compact surface-mount packaging
Key Technical Parameters
Drain-to-Source Voltage (VDS): 30 V
Maximum Gate-to-Source Voltage (VGS): ±20 V
Continuous Drain Current (ID): 600 mA
Maximum Power Dissipation (Pd): 280 mW
Quality and Safety Features
RoHS3 compliant
Suitable for critical applications
Compatibility
Suitable for a wide range of power electronics and control circuits
Application Areas
Power supplies
Motor drives
Switching regulators
Battery management systems
Industrial and automotive electronics
Product Lifecycle
Current production product
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
Efficient power switching and control
Reliable and robust performance
Compact surface-mount package
Wide operating temperature range
Compliance with RoHS regulations
SI1303DL-TL-E3Electro-Films (EFI) / Vishay