SI1300BDL-T1-E3 - Vishay Siliconix

Manufacturer Part Number

SI1300BDL-T1-E3

Manufacturer

Vishay / Siliconix

Introduction

N-Channel MOSFET Transistor

Product Features and Performance

20V Drain to Source Voltage

850mΩ Maximum On-Resistance

400mA Continuous Drain Current

Low Input Capacitance of 35pF

190mW Maximum Power Dissipation

Product Advantages

Suitable for low-power and high-efficiency applications

Low on-resistance for improved energy efficiency

Compact SC-70 surface mount package

Key Technical Parameters

Drain to Source Voltage (Vdss): 20V

Maximum Gate-Source Voltage (Vgs): ±8V

On-Resistance (Rds(on)): 850mΩ @ 250mA, 4.5V

Continuous Drain Current (Id): 400mA

Input Capacitance (Ciss): 35pF @ 10V

Power Dissipation (Max): 190mW (Ta), 200mW (Tc)

Quality and Safety Features

RoHS3 compliant

Industrial temperature range: -55°C to 150°C

Compatibility

Suitable for a wide range of low-power electronic applications

Application Areas

Switching power supplies

DC-DC converters

Amplifiers

Motor drives

General-purpose switching

Product Lifecycle

Current product, no discontinuation or replacement plans at this time

Key Reasons to Choose

Excellent on-resistance and power handling for efficient operation

Compact and versatile SC-70 surface mount package

Reliable performance over wide temperature range

RoHS3 compliance for environmentally-friendly applications