SI1062X-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SI1062X-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

N-Channel TrenchFET MOSFET

Product Features and Performance

Low on-resistance

Fast switching speed

High current capability

Low gate charge

High gate-source voltage rating

Product Advantages

Excellent power efficiency

Suitable for high-frequency switching applications

Reliable and robust performance

Key Technical Parameters

Drain to Source Voltage (Vdss): 20 V

Gate-Source Voltage (Vgs): ±8 V

On-Resistance (Rds(on)): 420 mΩ @ 500 mA, 4.5 V

Continuous Drain Current (Id): 530 mA

Input Capacitance (Ciss): 43 pF @ 10 V

Power Dissipation (Pd): 220 mW

Quality and Safety Features

RoHS3 compliant

Complies with relevant safety standards

Compatibility

Compatible with various electronic circuits and power management applications

Application Areas

Switching power supplies

Motor drives

Telecommunication equipment

Consumer electronics

Product Lifecycle

Currently available

No indication of discontinuation

Replacement or upgrade options may be available

Key Reasons to Choose This Product

Excellent power efficiency and switching performance

Reliable and robust design

Suitable for a wide range of power management applications

Readily available and compatible with various electronic systems