SI1050X-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SI1050X-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

Discrete Semiconductor Product

Single Transistor FET, MOSFET

Product Features and Performance

N-Channel MOSFET

Trench FET Technology

Low On-State Resistance (RDS(on))

Low Gate Charge (Qg)

Wide Operating Temperature Range (-55°C to 150°C)

High Drain Current Capability (1.34A)

Low Input Capacitance (Ciss)

High Power Dissipation (236mW)

Product Advantages

Efficient power switching

Compact surface mount package

Suitable for high-frequency applications

Robust and reliable performance

Key Technical Parameters

Drain to Source Voltage (VDS): 8V

Gate to Source Voltage (VGS): ±5V

On-State Resistance (RDS(on)): 86mΩ @ 1.34A, 4.5V

Threshold Voltage (VGS(th)): 900mV @ 250μA

Drive Voltage (VGS): 1.5V (max RDS(on)), 4.5V (min RDS(on))

Gate Charge (Qg): 11.6nC @ 5V

Quality and Safety Features

RoHS3 Compliant

Suitable for reflow soldering

Compatibility

SC-89 (SOT-563F) surface mount package

Application Areas

Power management circuits

Switching regulators

Motor drives

Battery chargers

Appliances and consumer electronics

Product Lifecycle

Current product, no discontinuation planned

Replacement or upgrade options available if needed

Key Reasons to Choose This Product

Excellent power switching performance

Compact and space-saving design

Wide operating temperature range

High reliability and long lifespan

Cost-effective solution for various applications