SI1077X-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SI1077X-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

Discrete Semiconductor Product - Transistors - FETs, MOSFETs - Single

Product Features and Performance

TrenchFET Series

P-Channel MOSFET

Vdss: 20V

Vgs (Max): ±8V

Rds On (Max) @ 1.8A, 4.5V: 78mOhm

Id (Continuous Drain) @ 25°C: 1.75A

Ciss (Max) @ 10V: 965pF

Power Dissipation (Max): 330mW

Vgs(th) (Max) @ 250A: 1V

Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V

Gate Charge (Qg) (Max) @ 8V: 31.1nC

Product Advantages

Low on-resistance

High current capability

Suitable for various power applications

Key Technical Parameters

Drain to Source Voltage (Vdss): 20V

Operating Temperature: -55°C to 150°C

Packaging: Tape & Reel (TR), SC-89 (SOT-563F)

Technology: MOSFET (Metal Oxide)

FET Type: P-Channel

Quality and Safety Features

RoHS3 Compliant

Compatibility

Surface Mount Mounting Type

Application Areas

Power management

Power switching

Amplifiers

Motor drives

Product Lifecycle

Current product, no discontinuation or upgrade information available

Key Reasons to Choose This Product

Low on-resistance for efficient power conversion

High current handling capability

Suitable for a wide range of power applications

Compact surface mount packaging

RoHS3 compliance for environmental regulations