Manufacturer Part Number
IRL640STRRPBF
Manufacturer
Vishay / Siliconix
Introduction
High-performance, logic-level N-channel MOSFET for power management and power switching applications
Product Features and Performance
High-efficiency power switching
Fast switching speed
Low on-resistance
Low gate charge
Product Advantages
Rugged and reliable design
Excellent thermal management
Wide operating temperature range
Key Technical Parameters
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±10 V
Rds On (Max) @ Id, Vgs: 180 mΩ @ 10 A, 5 V
Continuous Drain Current (Id) @ 25°C: 17 A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
Power Dissipation (Max): 3.1 W (Ta), 125 W (Tc)
Vgs(th) (Max) @ Id: 2 V @ 250 A
Drive Voltage (Max Rds On, Min Rds On): 4 V, 5 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 5 V
Quality and Safety Features
RoHS3 compliant
Meets strict quality and reliability standards
Compatibility
Surface mount package (DPAK/TO-263)
Suitable for a wide range of power management and switching applications
Application Areas
Power supplies
Motor drives
Lighting controls
Industrial automation
Automotive electronics
Product Lifecycle
Current product, not nearing discontinuation
Replacement and upgrade options available from Vishay
Key Reasons to Choose This Product
Exceptional power efficiency and switching performance
Robust and reliable design for demanding applications
Wide operating temperature range
Ease of integration with surface mount packaging
Availability of replacement and upgrade options