IRL7472L1TRPBF - Infineon Technologies

Manufacturer Part Number

IRL7472L1TRPBF

Manufacturer

Infineon Technologies

Introduction

High-performance N-channel power MOSFET in DirectFET Isometric L8 package for high-current switching applications

Product Features and Performance

Extremely low on-resistance and high current capability

Very low gate charge and gate-source voltage for high-speed switching

Optimized for high-current, high-frequency power conversion applications

Excellent thermal and electrical performance

Product Advantages

Compact and efficient power electronics design

Improved power density and energy efficiency

Reliable and robust performance

Key Technical Parameters

Drain to Source Voltage (Vdss): 40 V

Vgs (Max): ±20 V

Rds On (Max) @ Id, Vgs: 0.59 mOhm @ 195 A, 10 V

Current Continuous Drain (Id) @ 25°C: 375 A (Tc)

Input Capacitance (Ciss) (Max) @ Vds: 20082 pF @ 25 V

Power Dissipation (Max): 3.8 W (Ta), 341 W (Tc)

Vgs(th) (Max) @ Id: 2.5 V @ 250 A

Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 4.5 V

Quality and Safety Features

RoHS3 compliant

Robust and reliable design for high-stress applications

Compatibility

Surface mount package for easy integration into power electronics designs

Application Areas

High-current, high-frequency power conversion applications

Switched-mode power supplies

Electric vehicle (EV) and hybrid electric vehicle (HEV) power systems

Industrial motor drives

Renewable energy systems

Product Lifecycle

This product is currently in production and is not nearing discontinuation

Replacement or upgrade options may be available from Infineon Technologies

Key Reasons to Choose This Product

Exceptional low on-resistance and high current capability for efficient power conversion

Fast switching performance enabled by low gate charge and gate-source voltage

Compact and efficient packaging for high power density designs

Reliable and robust performance in high-stress applications

RoHS3 compliance for environmental responsibility