Manufacturer Part Number
IRL640PBF
Manufacturer
Vishay / Siliconix
Introduction
High-power N-channel power MOSFET with fast switching speed and low on-resistance.
Product Features and Performance
High drain-source voltage rating of 200V
Low on-resistance of 180 mΩ at 10A, 5V
Continuous drain current of 17A at 25°C case temperature
Input capacitance of 1800 pF at 25V
Gate charge of 66 nC at 5V
Wide operating temperature range of -55°C to 150°C
Product Advantages
Excellent power handling capability
Fast switching speed
Low conduction losses
Reliable and robust design
Key Technical Parameters
Drain-Source Voltage (Vdss): 200V
Gate-Source Voltage (Vgs): ±10V
On-Resistance (Rds(on)): 180 mΩ @ 10A, 5V
Continuous Drain Current (Id): 17A @ 25°C
Input Capacitance (Ciss): 1800 pF @ 25V
Power Dissipation (Pd): 125W @ 25°C case temperature
Quality and Safety Features
RoHS3 compliant
Suitable for industrial and automotive applications
Reliable and durable construction
Compatibility
Compatible with various electronic circuit designs requiring high-power, fast-switching N-channel MOSFET devices
Application Areas
Power supplies
Motor drives
Switching regulators
Inverters
Amplifiers
Product Lifecycle
Currently in production
No plans for discontinuation
Replacement or upgrade options available
Several Key Reasons to Choose This Product
High power handling capability
Low on-resistance for efficient power conversion
Fast switching speed for improved circuit performance
Wide operating temperature range for versatile applications
Reliable and robust design for long-term usage
RoHS3 compliance for environmentally-friendly applications