Manufacturer Part Number
IRFRC20TRPBF
Manufacturer
Vishay / Siliconix
Introduction
High-voltage N-channel power MOSFET in a TO-252 package
Product Features and Performance
600V drain-source voltage
Low on-resistance of 4.4Ω at 1.2A, 10V
2A continuous drain current at 25°C
Suitable for high-voltage, high-power switching applications
Product Advantages
High voltage capability
Low on-resistance
Surface mount package
Key Technical Parameters
Drain-source voltage: 600V
Max gate-source voltage: ±20V
On-resistance: 4.4Ω at 1.2A, 10V
Continuous drain current: 2A at 25°C
Input capacitance: 350pF at 25V
Power dissipation: 2.5W at Ta, 42W at Tc
N-channel MOSFET
Quality and Safety Features
RoHS3 compliant
Suitable for industrial and high-reliability applications
Compatibility
TO-252-3, D-Pak (2 Leads + Tab), SC-63 package
Tape & reel packaging
Application Areas
High-voltage, high-power switching applications
Industrial power supplies
Motor drives
Lighting ballasts
Product Lifecycle
Current production, no discontinuation planned
Replacements and upgrades may be available
Key Reasons to Choose This Product
High voltage capability up to 600V
Low on-resistance for efficient power switching
Compact surface mount package
Suitable for high-power, high-reliability applications
RoHS3 compliance for environmental safety