Manufacturer Part Number
IRFR9N20DTRPBF
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel MOSFET transistor
Product Features and Performance
Designed for high-frequency, high-power switching applications
Excellent switching characteristics for efficient power conversion
Low on-resistance and fast switching enable high-efficiency operation
Capable of handling high voltages up to 200V
Can operate over a wide temperature range of -55°C to 175°C
Product Advantages
Efficient power conversion
High-frequency operation
Compact surface-mount package
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 200V
Gate-to-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 380mΩ @ 5.6A, 10V
Continuous Drain Current (Id): 9.4A @ 25°C
Input Capacitance (Ciss): 560pF @ 25V
Power Dissipation (Pd): 86W @ Tc
Quality and Safety Features
RoHS3 compliant
Reliable MOSFET technology
Compatibility
Suitable for a wide range of high-frequency, high-power switching applications
Application Areas
Switch-mode power supplies
Inverters
Motor drives
Lighting ballasts
Industrial and consumer electronics
Product Lifecycle
Currently in production
Replacements and upgrades available
Key Reasons to Choose This Product
Excellent efficiency and power handling capabilities
Fast switching performance for high-frequency operation
Compact and reliable surface-mount package
Wide operating temperature range
RoHS compliance for environmental safety
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