IRFRC20TRLPBF - Vishay Siliconix

Manufacturer Part Number

IRFRC20TRLPBF

Manufacturer

Vishay / Siliconix

Introduction

This is a Discrete Semiconductor Product, specifically a Transistor - FET, MOSFET - Single.

Product Features and Performance

RoHS3 compliant

MOSFET (Metal Oxide) technology

N-Channel FET type

Drain to Source Voltage (Vdss) of 600V

Maximum Vgs of ±20V

Maximum Rds On of 4.4Ohm @ 1.2A, 10V

Continuous Drain Current (Id) of 2A at 25°C (Tc)

Maximum Input Capacitance (Ciss) of 350pF at 25V

Maximum Power Dissipation of 2.5W (Ta), 42W (Tc)

Maximum Gate Charge (Qg) of 18nC at 10V

Operating Temperature range of -55°C to 150°C (TJ)

Product Advantages

High voltage and current handling capabilities

Low on-state resistance

Compact D-Pak surface mount package

Suitable for a wide range of applications

Key Technical Parameters

Drain to Source Voltage (Vdss): 600V

Maximum Vgs: ±20V

Maximum Rds On: 4.4Ohm @ 1.2A, 10V

Continuous Drain Current (Id): 2A at 25°C (Tc)

Input Capacitance (Ciss): 350pF at 25V

Power Dissipation: 2.5W (Ta), 42W (Tc)

Gate Charge (Qg): 18nC at 10V

Operating Temperature: -55°C to 150°C (TJ)

Quality and Safety Features

RoHS3 compliant

Suitable for safety-critical applications

Compatibility

Compatible with a wide range of electronic circuits and systems

Application Areas

Switched-mode power supplies

Motor drives

Inverters

Lighting ballasts

General-purpose power switching

Product Lifecycle

Currently in production

Replacement or upgrade options available

Key Reasons to Choose This Product

High voltage and current handling capabilities

Low on-state resistance for efficient power conversion

Compact surface mount packaging for space-constrained designs

Suitable for a wide range of power electronics applications

RoHS3 compliance for use in environmentally-friendly products

Proven reliability and performance from a reputable manufacturer