Manufacturer Part Number
IRFR220TRPBF
Manufacturer
Vishay / Siliconix
Introduction
This is a discrete semiconductor product, specifically a single transistor - FET, MOSFET.
Product Features and Performance
N-Channel MOSFET
Drain to Source Voltage (Vdss) of 200V
Maximum Gate-Source Voltage (Vgs) of ±20V
On-State Resistance (Rds(on)) of 800mΩ @ 2.9A, 10V
Continuous Drain Current (Id) of 4.8A at 25°C case temperature
Input Capacitance (Ciss) of 260pF @ 25V
Power Dissipation of 2.5W at 25°C ambient, 42W at 25°C case temperature
Gate Charge (Qg) of 14nC @ 10V
Product Advantages
High voltage and current handling capability
Low on-state resistance for efficient power switching
Surface mount package for compact PCB design
Key Technical Parameters
MOSFET Technology
N-Channel FET Type
Threshold Voltage (Vgs(th)) of 4V @ 250μA
Operating Temperature Range of -55°C to 150°C
Quality and Safety Features
RoHS3 compliant
D-Pak (TO-252-3) surface mount package
Compatibility
Replacement for various MOSFET devices in similar packages and specifications
Application Areas
Power supplies
Motor drives
Switching regulators
Amplifiers
Industrial controls
Product Lifecycle
This product is still in active production and has no known discontinuation plans
Replacements and upgrades may be available from Vishay/Siliconix or other manufacturers
Key Reasons to Choose This Product
High voltage and current capability for demanding power applications
Low on-state resistance for efficient switching and low power loss
Small surface mount package for compact PCB designs
Proven reliability and performance from a reputable manufacturer
Availability of replacements and ongoing product support