IRFR220PBF - Vishay Siliconix

Manufacturer Part Number

IRFR220PBF

Manufacturer

Vishay / Siliconix

Introduction

N-Channel MOSFET Transistor

Designed for high-power, high-frequency switching applications

Product Features and Performance

Drain-Source Voltage (Vdss) of 200V

Continuous Drain Current (Id) of 4.8A at 25°C

On-Resistance (RDS(on)) of 800mΩ at 2.9A, 10V

Input Capacitance (Ciss) of 260pF at 25V

Power Dissipation of 2.5W at 25°C, 42W at 25°C (Tc)

Fast Switching Speeds

Robust Design for Reliable Operation

Product Advantages

Suitable for High-Power, High-Frequency Switching Applications

Excellent Power Handling Capabilities

Low On-Resistance for Efficient Power Conversion

Compact D-Pak Surface Mount Package

Key Technical Parameters

Drain-Source Voltage (Vdss): 200V

Gate-Source Voltage (Vgs): ±20V

On-Resistance (RDS(on)): 800mΩ @ 2.9A, 10V

Continuous Drain Current (Id): 4.8A at 25°C

Input Capacitance (Ciss): 260pF at 25V

Power Dissipation: 2.5W at 25°C, 42W at 25°C (Tc)

Quality and Safety Features

RoHS3 Compliant

Reliable and Robust Design

Compatibility

Compatible with a wide range of high-power, high-frequency switching applications

Application Areas

Power Supplies

Motor Drives

Switching Regulators

Inverters

Industrial Electronics

Automotive Electronics

Product Lifecycle

Currently in production

Replacement or upgrade options available from Vishay/Siliconix

Key Reasons to Choose This Product

Excellent power handling capabilities

Low on-resistance for efficient power conversion

Fast switching speeds for high-frequency applications

Compact and reliable D-Pak surface mount package

Broad compatibility and suitability for various high-power, high-frequency applications