IRFR220NTRPBF - Infineon Technologies

Manufacturer Part Number

IRFR220NTRPBF

Manufacturer

Infineon Technologies

Introduction

Discrete Semiconductor Product

Transistors FETs, MOSFETs Single

Product Features and Performance

RoHS3 Compliant

D-Pak package

HEXFET series

N-Channel MOSFET

Drain to Source Voltage (Vdss): 200 V

Vgs (Max): ±20V

Rds On (Max) @ Id, Vgs: 600mOhm @ 2.9A, 10V

Current Continuous Drain (Id) @ 25°C: 5A (Tc)

Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V

Power Dissipation (Max): 43W (Tc)

Vgs(th) (Max) @ Id: 4V @ 250A

Drive Voltage (Max Rds On, Min Rds On): 10V

Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V

Operating Temperature: -55°C ~ 175°C (TJ)

Product Advantages

High voltage capability

Low on-resistance

High current handling

Suitable for various power applications

Key Technical Parameters

Voltage, current, and power ratings

On-resistance and gate charge specifications

Operating temperature range

Quality and Safety Features

RoHS3 compliant

Reliable performance within specified operating conditions

Compatibility

Compatible with various power electronics applications

Application Areas

Power supplies

Motor drives

Switching circuits

Inverters

Converters

Product Lifecycle

Established product

No indication of discontinuation

Availability of replacements and upgrades within the HEXFET series

Key Reasons to Choose This Product

High voltage and current handling capability

Low on-resistance for efficient power conversion

Wide operating temperature range

Compliance with RoHS regulations

Suitability for various power electronics applications