Manufacturer Part Number
IRFP31N50LPBF
Manufacturer
Vishay / Siliconix
Introduction
High-performance N-channel MOSFET for power switching and amplification applications
Product Features and Performance
Drain to Source Voltage (Vdss) of 500V
Continuous Drain Current (Id) of 31A at 25°C
On-State Resistance (Rds(on)) of 180mΩ at 19A, 10V
Input Capacitance (Ciss) of 5000pF at 25V
Power Dissipation (Tc) of 460W
Operating Temperature Range of -55°C to 150°C
Product Advantages
Excellent switching performance
High power handling capability
Low on-state resistance
Suitable for high-voltage, high-current applications
Key Technical Parameters
MOSFET Technology: N-Channel
Gate-Source Voltage (Vgs(th)) of 5V at 250A
Gate Charge (Qg) of 210nC at 10V
Quality and Safety Features
RoHS3 compliant
TO-247AC package for reliable performance
Compatibility
Through-hole mounting
Application Areas
Power switching
Power amplification
Industrial and automotive applications
Product Lifecycle
Current production model, no plans for discontinuation
Replacement parts and upgrades available
Key Reasons to Choose This Product
Excellent power handling and efficiency
Reliable performance in high-voltage, high-current applications
Cost-effective solution for power switching needs
Wide operating temperature range
IRFP3206PBF MOSCypress Semiconductor (Infineon Technologies)