Manufacturer Part Number
IRFP2907PBF
Manufacturer
Infineon Technologies
Introduction
The IRFP2907PBF is a high-performance, N-channel power MOSFET from Infineon Technologies. It is designed for use in various power conversion and control applications.
Product Features and Performance
High drain-to-source breakdown voltage of 75V
Low on-resistance (RDS(on)) of 4.5mΩ at 125A, 10V
High continuous drain current (ID) of 209A at 25°C
Wide operating temperature range of -55°C to 175°C
Fast switching capabilities with low gate charge (Qg) of 620nC at 10V
Robust and reliable performance in harsh environments
Product Advantages
Efficient power conversion and control
Excellent thermal management
Reliable operation in various applications
Easy integration and implementation
Key Technical Parameters
Drain-to-Source Voltage (VDS): 75V
Gate-to-Source Voltage (VGS): ±20V
On-Resistance (RDS(on)): 4.5mΩ at 125A, 10V
Continuous Drain Current (ID): 209A at 25°C
Input Capacitance (Ciss): 13000pF at 25V
Power Dissipation (Pd): 470W at Tc
Quality and Safety Features
RoHS3 compliant
Suitable for use in harsh environments
Rigorous quality control and testing
Compatibility
Compatible with various power conversion and control applications
Application Areas
Power supplies
Motor drives
Switched-mode power supplies (SMPS)
Inverters
Converters
Industrial and automotive electronics
Product Lifecycle
Currently in production
No known plans for discontinuation
Replacement or upgrade options available from Infineon
Several Key Reasons to Choose This Product
High efficiency and performance
Excellent thermal management capabilities
Reliable and robust operation in harsh environments
Easy integration and implementation
Proven track record of quality and safety