Manufacturer Part Number
IRFP3206PBF
Manufacturer
Infineon Technologies
Introduction
High-performance power MOSFET device
Product Features and Performance
Optimized for high-frequency, high-power switching applications
Ultra-low on-resistance for high efficiency
Fast switching and low gate charge for improved system performance
Qualified to AEC-Q101 for automotive applications
Product Advantages
High power density
Excellent thermal management
Reliable and robust design
Key Technical Parameters
Drain to Source Voltage (Vdss): 60V
Vgs (Max): ±20V
Rds On (Max) @ Id, Vgs: 3mOhm @ 75A, 10V
Current Continuous Drain (Id) @ 25°C: 120A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6540 pF @ 50 V
Power Dissipation (Max): 280W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150A
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Quality and Safety Features
RoHS3 compliant
AEC-Q101 qualified for automotive applications
Compatibility
TO-247AC package
Application Areas
High-frequency, high-power switching applications
Automotive power systems
Industrial power electronics
Renewable energy systems
Product Lifecycle
Current product, no known discontinuation
Several Key Reasons to Choose This Product
Optimized for high-efficiency, high-power switching
Excellent thermal management and reliability
Robust design for demanding applications
Automotive and industrial-grade quality
Broad compatibility with standard TO-247AC package