Manufacturer Part Number
IRF840BPBF
Manufacturer
Vishay / Siliconix
Introduction
High-performance N-channel power MOSFET with low on-resistance and fast switching capabilities.
Product Features and Performance
High breakdown voltage of 500V
Low on-resistance of 850mOhm
Continuous drain current of 8.7A at 25°C
Fast switching with low gate charge of 30nC
Wide operating temperature range of -55°C to 150°C
Product Advantages
Excellent power handling capability
Efficient power conversion with low conduction losses
Reliable high-voltage operation
Suitable for various power management applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 500V
Gate-to-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 850mOhm
Continuous Drain Current (Id): 8.7A
Input Capacitance (Ciss): 527pF
Power Dissipation (Tc): 156W
Quality and Safety Features
RoHS3 compliant
Suitable for high-temperature environments
Compatibility
Through-hole mounting (TO-220AB package)
Application Areas
Power supplies
Motor drives
Inverters
Switching regulators
High-voltage switch mode applications
Product Lifecycle
Currently in production
No immediate plans for discontinuation
Replacement or upgrade options available from Vishay/Siliconix
Key Reasons to Choose
High voltage and current handling capability
Excellent power efficiency with low on-resistance
Fast switching performance for efficient power conversion
Wide operating temperature range for reliable operation
Proven reliability and quality from a reputable manufacturer