IRF840ASPBF - Vishay Siliconix

Manufacturer Part Number

IRF840ASPBF

Manufacturer

Vishay / Siliconix

Introduction

N-Channel MOSFET transistor with high voltage, low on-resistance, and surface mount package.

Product Features and Performance

500V drain-source voltage

850mΩ on-resistance at 4.8A, 10V

8A continuous drain current at 25°C

1W power dissipation at 25°C ambient

1018pF input capacitance at 25V

38nC gate charge at 10V

Product Advantages

High voltage and low on-resistance for efficient power switching

Surface mount package for compact design

Suitable for a wide range of power electronics applications

Key Technical Parameters

Drain-Source Voltage (Vdss): 500V

Gate-Source Voltage (Vgs): ±30V

On-Resistance (Rds(on)): 850mΩ

Continuous Drain Current (Id): 8A

Power Dissipation (Pd): 3.1W (Ta), 125W (Tc)

Quality and Safety Features

RoHS3 compliant

Operating temperature range: -55°C to 150°C

Compatibility

TO-263-3, DPak (2 Leads + Tab), TO-263AB package

Surface mount (DPAK) footprint

Application Areas

Switching power supplies

Motor drives

Inverters

Industrial and consumer electronics

Product Lifecycle

This product is an active and widely available MOSFET from Vishay.

Replacements and upgrades with similar specifications are readily available.

Key Reasons to Choose This Product

High voltage and low on-resistance for efficient power switching

Surface mount package for compact design

Wide operating temperature range and RoHS compliance

Suitable for a variety of power electronics applications

Readily available and actively supported by the manufacturer