Manufacturer Part Number
IRF840LCPBF
Manufacturer
Vishay / Siliconix
Introduction
High-performance N-channel power MOSFET in a TO-220 package.
Product Features and Performance
High drain-source voltage up to 500 V
Low on-resistance down to 850 mΩ
High continuous drain current up to 8 A
Wide operating temperature range from -55°C to 150°C
Low input capacitance of 1100 pF
Low gate charge of 39 nC
Product Advantages
Excellent power handling capability
Efficient power conversion and control
Reliable and durable performance
Suitable for high-voltage and high-current applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 500 V
Gate-Source Voltage (Vgs): ±30 V
On-Resistance (Rds(on)): 850 mΩ
Continuous Drain Current (Id): 8 A
Input Capacitance (Ciss): 1100 pF
Power Dissipation (Pd): 125 W
Quality and Safety Features
RoHS3 compliant
TO-220AB package with high thermal dissipation
Compatibility
Compatible with a wide range of electronic devices and power applications.
Application Areas
Switching power supplies
Motor drives
Lighting control
Industrial and consumer electronics
Product Lifecycle
The IRF840LCPBF is an active and widely available product. Vishay/Siliconix continues to manufacture and support this MOSFET, and there are no plans for discontinuation.
Key Reasons to Choose This Product
Excellent power handling and efficiency
Reliable and durable performance
Suitable for high-voltage and high-current applications
Readily available and well-supported by the manufacturer
RoHS3 compliance for environmental friendliness