Manufacturer Part Number
2N7002E-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
The 2N7002E-T1-GE3 is a N-channel MOSFET transistor from Vishay / Siliconix.
Product Features and Performance
Low on-resistance
High current handling capability
Fast switching speed
Low gate charge
Wide operating temperature range (-55°C to 150°C)
RoHS compliant
Product Advantages
Reliable and robust performance
Efficient power handling
Suitable for high-speed switching applications
Compact surface mount package
Key Technical Parameters
Drain to Source Voltage (Vdss): 60V
Gate-Source Voltage (Vgs): ±20V
On-resistance (Rds(on)): 3Ω @ 250mA, 10V
Continuous Drain Current (Id): 240mA
Input Capacitance (Ciss): 21pF @ 5V
Power Dissipation (Pd): 350mW
Threshold Voltage (Vgs(th)): 2.5V @ 250µA
Gate Charge (Qg): 0.6nC @ 4.5V
Quality and Safety Features
RoHS 3 compliant
Suitable for high-reliability applications
Compatibility
Surface mount (TO-236) package
Tape and reel packaging
Application Areas
Switch mode power supplies
Motor drives
Lighting and lamp control
General purpose switching
Product Lifecycle
Currently in production
No known discontinuation plans
Replacements and upgrades available
Key Reasons to Choose This Product
Reliable and robust performance
Efficient power handling
Suitable for high-speed switching applications
Compact surface mount package
RoHS compliance for environmental safety
Wide operating temperature range
Availability in tape and reel packaging for ease of use