Manufacturer Part Number
2N7002E-T1-E3
Manufacturer
Vishay / Siliconix
Introduction
Discrete Semiconductor Product - Single Transistor, N-Channel MOSFET
Product Features and Performance
N-Channel MOSFET transistor
60V Drain-Source Voltage
240mA Continuous Drain Current
3Ω Maximum On-Resistance
21pF Input Capacitance
6nC Gate Charge
350mW Power Dissipation
-55°C to 150°C Operating Temperature
Product Advantages
Compact SOT-23-3 (TO-236) surface mount package
Low on-resistance for efficient power switching
Wide operating voltage and temperature range
Suitable for general purpose switching and amplifier applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 60V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 3Ω @ 250mA, 10V
Continuous Drain Current (Id): 240mA
Input Capacitance (Ciss): 21pF @ 5V
Power Dissipation (Pd): 350mW
Quality and Safety Features
RoHS3 compliant
Suitable for Tape and Reel packaging
Compatibility
Compatible with general purpose N-Channel MOSFET applications
Application Areas
Amplifiers
Switches
Power management circuits
General purpose electronic circuits
Product Lifecycle
Current production, no planned obsolescence
Replacements and upgrades available as needed
Key Reasons to Choose This Product
Compact, surface mount package
Low on-resistance for efficient switching
Wide voltage and temperature operating range
Suitable for a variety of general purpose electronic applications
RoHS3 compliant for environmental responsibility
Readily available in Tape and Reel packaging
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