Manufacturer Part Number
2N7002ET1G
Manufacturer
onsemi
Introduction
The 2N7002ET1G is a discrete N-Channel MOSFET transistor in a small surface-mount package. It is suitable for a wide range of low-power switching and amplifier applications.
Product Features and Performance
N-Channel MOSFET
60V Drain-Source Voltage
260mA Continuous Drain Current
5Ω Typical On-Resistance
7pF Input Capacitance
300mW Power Dissipation
Product Advantages
Small surface-mount package
Low on-resistance
Wide operating temperature range
High switching speed
Suitable for low-power applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 60V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 2.5Ω @ 240mA, 10V
Drain Current (Id): 260mA
Input Capacitance (Ciss): 26.7pF @ 25V
Power Dissipation (Pd): 300mW
Quality and Safety Features
RoHS3 compliant
Suitable for reflow soldering
Excellent thermal and electrical performance
Compatibility
Widely compatible with various electronic circuits and systems
Application Areas
Switching circuits
Amplifier circuits
Low-power analog and digital circuits
Power management applications
Product Lifecycle
Currently in production
No known discontinuation plans
Replacement parts and upgrades available as needed
Reasons to Choose This Product
Small surface-mount package for compact designs
Low on-resistance for efficient power transfer
Wide operating temperature range for versatile applications
High switching speed for fast-switching circuits
Suitable for low-power, energy-efficient designs
RoHS3 compliance for environmental responsibility
Ample availability and compatibility for easy integration
2N7002EDCU6Taiwan Semiconductor
2N7002E-T1-E3 MOSElectro-Films (EFI) / Vishay
2N7002FNexperia