Manufacturer Part Number
2N7002H-7
Manufacturer
Diodes Incorporated
Introduction
N-Channel MOSFET transistor
Product Features and Performance
Wide operating temperature range of -55°C to 150°C
Low on-resistance (Rds(on)) of 7.5Ω at 50mA, 5V
High drain-source voltage (Vdss) of 60V
Low gate-source voltage (Vgs) of ±20V
High continuous drain current (Id) of 170mA at 25°C
Low input capacitance (Ciss) of 26pF at 25V
Low power dissipation of 370mW at 25°C
Product Advantages
Suitable for a wide range of applications
Excellent thermal performance
High reliability and durability
Key Technical Parameters
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Vgs(th) (Max) @ Id: 3V @ 250A
Drive Voltage (Max Rds On, Min Rds On): 5V
Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V
Quality and Safety Features
RoHS3 compliant
Compatibility
Suitable for surface mount applications
Application Areas
Ideal for use in power management, switching, and control circuits
Product Lifecycle
Currently in production
Replacement or upgrade options available if needed
Key Reasons to Choose This Product
Wide operating temperature range
Low on-resistance for efficient power handling
High voltage and current capabilities
Compact surface mount package
Reliable and durable performance
RoHS compliance for environmental friendliness