Manufacturer Part Number
T2N7002BK,LM
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Introduction
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
Product Features and Performance
N-Channel MOSFET
60V Drain to Source Voltage
±20V Gate to Source Voltage
5Ohm On-Resistance @ 100mA, 10V
400mA Continuous Drain Current @ 25°C
40pF Input Capacitance @ 10V
320mW Power Dissipation
1V Gate Threshold Voltage @ 250µA
5V and 10V Drive Voltage Ranges
6nC Gate Charge @ 4.5V
Product Advantages
Low On-Resistance
High Drain Current Capability
Small Package Size
Key Technical Parameters
Drain to Source Voltage: 60V
Gate to Source Voltage: ±20V
On-Resistance: 1.5Ohm
Continuous Drain Current: 400mA
Input Capacitance: 40pF
Power Dissipation: 320mW
Gate Threshold Voltage: 2.1V
Drive Voltage Range: 4.5V to 10V
Gate Charge: 0.6nC
Quality and Safety Features
RoHS3 Compliant
Compatibility
Surface Mount Package: SOT-23-3
Application Areas
General Purpose Switching
Power Management Circuits
Battery Powered Devices
Product Lifecycle
Current product, no discontinuation planned
Replacements and upgrades available
Key Reasons to Choose This Product
Low on-resistance for high efficiency
High current capability for power applications
Small package size for compact designs
Wide voltage range and compatibility
Robust quality and safety features