FQD3P50TM - onsemi

Manufacturer Part Number

FQD3P50TM

Manufacturer

onsemi

Introduction

The FQD3P50TM is a high-voltage, low on-resistance P-channel MOSFET from onsemi. It is designed for a wide range of power conversion and switching applications.

Product Features and Performance

High drain-source voltage rating of 500V

Low on-resistance of 4.9Ω at 1.05A, 10V

Continuous drain current of 2.1A at 25°C

Wide operating temperature range of -55°C to 150°C

Low input capacitance of 660pF at 25V

Maximum power dissipation of 2.5W at 25°C ambient, 50W at 25°C case

Product Advantages

Excellent performance for high-voltage, high-power applications

Efficient power conversion with low conduction losses

Reliable operation in a wide range of environmental conditions

Key Technical Parameters

Drain-Source Voltage (Vdss): 500V

Gate-Source Voltage (Vgs): ±30V

On-Resistance (Rds(on)): 4.9Ω @ 1.05A, 10V

Threshold Voltage (Vgs(th)): 5V @ 250A

Input Capacitance (Ciss): 660pF @ 25V

Gate Charge (Qg): 23nC @ 10V

Quality and Safety Features

RoHS3 compliant

Suitable for high-reliability, safety-critical applications

Compatibility

TO-252-3 (DPak) package

Compatible with standard MOSFET drivers and control circuitry

Application Areas

Power conversion and switching in industrial, automotive, and consumer electronics

Motor control

Inverters and converters

Product Lifecycle

Currently in active production

Replacements and upgrades may be available in the future

Key Reasons to Choose This Product

Exceptional performance in high-voltage, high-power applications

Low on-resistance for efficient power conversion

Wide operating temperature range for reliable operation

RoHS3 compliance for use in safety-critical applications

Readily available in standard package format